Ultra-low particle semiconductor cleaner using heated fluids

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 19, 134 21, 134 254, 134 255, 134 26, 134 30, 134 37, 134902, 34 78, B08B 304, B08B 310, B08B 500

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059581468

ABSTRACT:
A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

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