Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1997-02-06

1998-11-03

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

058320180

ABSTRACT:
A semiconductor laser device has a GaAs substrate (11), a single- or multiple-quantum well (QW) structure including at least one InGaAs strained QW active layer (16), a pair of GaAsP or In.sub.z Ga.sub.1-z AsP barrier layers (15,17) (z.ltoreq.0.3) interposing therebetween the QW structure, and a pair of AlGaAs cladding layers (13, 19) sandwiching the pair of barrier layers (15,17) and the QW structure as a whole. The semiconductor laser prevents a catastrophic optical damage (COD) caused by recombination current due to the presence of aluminum and exhibits a high optical output power.

REFERENCES:
patent: 5088099 (1992-02-01), Chen et al.
patent: 5155738 (1992-10-01), Ijichi et al.
patent: 5263040 (1993-11-01), Hayakawa
patent: 5408487 (1995-04-01), Uchida et al.
patent: 5583878 (1996-12-01), Shimizu et al.
Sagawa et al, "Advantages of InGaAsP Separate Confinement Layer in 0.98 um InGaAs/GaAs/InGaP Strained DQW Lasers for High Power Operation at High Temperature", Electronics Letters, vol. 28, No. 17, pp. 1639-1640, Aug. 13, 1992.

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