Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Mondt, Johannes (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S297000, C257S446000
Reexamination Certificate
active
10647604
ABSTRACT:
A MOSFET transistor structure is formed in a substrate of semiconductor material having a first conductivity type. The MOSFET transistor structure includes an active region that is surrounded by a perimeter isolation dielectric material formed in the substrate to define a continuous sidewall interface between the sidewall dielectric material and the active region. Spaced-apart source and drain regions are formed in the active region and are also spaced-apart from the sidewall interface. A conductive gate electrode that is separated from the substrate channel region by intervening gate dielectric material includes a first portion that extends over the substrate channel region and a second portion that extends continuously over the entire sidewall interface between the isolation dielectric material and the active region. Thus, an enclosed ring is maintained around the entire composite perimeter, thereby completely avoiding regions of high trap density and, thus, preventing any current path for gate induced drain leakage (GIDL) to occur.
REFERENCES:
patent: 6121657 (2000-09-01), Yama
patent: 6611027 (2003-08-01), Ichikawa
patent: 2003/0001196 (2003-01-01), Choi et al.
patent: 2003/0006463 (2003-01-01), Ichikawa
patent: 62123736 (1987-06-01), None
Drury Robert
Hopper Peter J.
Lindorfer Philipp
Vashchenko Vladislav
Mondt Johannes
National Semiconductor Corporation
Stallman & Pollock LLP
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