Ultra low dielectric constant thin film

Details Ultra low dielectric constant thin film Ultra low dielectric constant thin film

2005-06-14

2005-06-14

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S624000, C438S629000, C438S643000, C438S200000, C438S778000

Reexamination Certificate

active

06905909

ABSTRACT:
A method for forming a substantially oxygen-free silicon carbide layer on a substrate, where the silicon carbide layer has a dielectric constant of less than about four. The substrate is held at a deposition temperature of between about zero centigrade and about one hundred centigrade, and a gas flow of tetramethylsilane is introduced at a rate of no more than about one thousand scientific cubic centimeters per minute. The deposition pressure is held between about one milli Torr and about one hundred Torr, and a radio frequency plasma discharge is produced with a power of no more than about two kilowatts. The plasma discharge is halted when a desired thickness of the silicon carbide layer has been formed.

REFERENCES:
patent: 2005/0009320 (2005-01-01), Goundar

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