Ultra high purity vapor phase treatment

Details Ultra high purity vapor phase treatment Ultra high purity vapor phase treatment

1993-11-15

1995-03-07

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 31, 156657, 156345, B44C 122, C03C 1500, C03C 2506

Patent

active

053954823

ABSTRACT:
A semiconductor wafer vapor phase treatment method and apparatus for dissolving an insulating film formed on a semiconductor wafer at a high speed and high purity. A liquid reagent is heated and vaporized to obtain reagent vapors capable of dissolving an object to be treated. The reagent vapors are passed through a hydrophobic porous film to intercept mists having a diameter greater than a predetermined value and obtain high purity reagent vapors. The purified reagent vapors are supplied to the cooled object. The vapors which dissolved the object are liquidized to generate droplets.

REFERENCES:
patent: 5174855 (1992-12-01), Tanaka
patent: 5282925 (1994-02-01), Jeng et al.
Pre-prints 2C13 of 1992 Annual Meeting of The Japan Society for Analytical Chemistry.
Technical Study Report SMD 91-159, the Institute of Electronics, Information, and Communication Engineers of Japan.
J. Vac. Sci. Technol., vol. 7, or A7, No. 3, May/Jun. 1989, pp. 1719-1723.
The Practical Handbook for ULSI Manufacturing System, issued by Scienceforum Ltd., Japan, Nov. 30, 1991.
Excalibur, Hydrofluoric Acid Anhydride Gas Process System, developed by Texas Institute of Technology and FSI Ltd.

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