Ultra high density, non-volatile ferromagnetic random access mem

Static information storage and retrieval – Systems using particular element

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365157, 365158, 365171, 365173, 365147, 365 63, 365 48, G11C 1115

Patent

active

054774829

ABSTRACT:
A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation. These preferred directions of orientation may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations. Once the bit is set, the value of the determined by the relative alignment of the magnetic moments of the first and second ferromagnetic layers. This value may be read by applying an interrogating current across the memory element, perpendicular to the plane within which the magnetic moment of the first ferromagnetic layer is oriented, and observing the variation in resistance. These ferromagnetic elements may be fabricated using conventional photolithography. Groups of these ferromagnetic element may be organized into word trees and other arrays.

REFERENCES:
patent: 3964034 (1976-06-01), Torok et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 5012444 (1991-04-01), Hurst, Jr. et al.
patent: 5140549 (1992-08-01), Fryer
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5295097 (1994-03-01), Lienau
Kump et al, "Coupled NDRO Magnetic Film Memory" IBM TDB, vol. 13, No. 7, . 1970, pp. 2110-2111.
Louis, "Thin Film Magnetic Storage Element", IBM TDB, vol. 6, No. 10, Mar. 1964, pp. 99-100.
Archey et al, "Double Layer Memory Device", IBM TDB, vol. 12, No. 7, Dec. 1969, p. 1039.
Thompson et al., "Thin Film Magnetoresistors in Memory, Storage, and Related, Applications", IEEE Transactions on Magnetics 11 (4) 1039-50 (Jul. 1975).
Binasch et al., "Enhanced Magnetoresistance in Layered Magnetic Structures with Antiferromagnetic Interlayer Exchange", Physical Rev. B. 39 (7) 4828-30 (Mar. 1, 1989).

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