Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-29
2006-08-29
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S242000, C257S328000, C257S332000
Reexamination Certificate
active
07098500
ABSTRACT:
The cellular structure of the power device includes a substrate that has a highly doped drain region. Over the substrate there is a more lightly doped epitaxial layer of the same doping. Above the epitaxial layer is a well region formed of an opposite type doping. Covering the wells is an upper source layer of the first conductivity type that is heavily doped. The trench structure includes a sidewall oxide or other suitable insulating material that covers the sidewalls of the trench. The bottom of the trench is filled with a doped polysilicon shield. An interlevel dielectric such as silicon nitride covers the shield. The gate region is formed by another layer of doped polysilicon. A second interlevel dielectric, typically borophosphosilicate glass (BPSG) covers the gate. In operation, current flows vertically between the source and the drain through a channel in the well when a suitable voltage is applied to the gate.
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Abraham Fetsum
Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
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