U-shaped SONOS memory having an elevated source and drain

Details U-shaped SONOS memory having an elevated source and drain U-shaped SONOS memory having an elevated source and drain

2008-08-15

2010-11-02

Garber, Charles D (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07825448

ABSTRACT:
A semiconductor device and a method for manufacturing thereof are provided. The semiconductor device includes two epitaxial semiconductor layers formed on a semiconductor substrate, bit lines formed on upper portions of the two epitaxial semiconductor layers, and a charge storage layer formed on the semiconductor substrate between the two epitaxial semiconductor layers.

REFERENCES:
patent: 4792834 (1988-12-01), Uchida
patent: 4833094 (1989-05-01), Kenney
patent: 5181089 (1993-01-01), Matsuo et al.

Affiliated with

Also associated with

Rating

U-shaped SONOS memory having an elevated source and drain does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with U-shaped SONOS memory having an elevated source and drain, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and U-shaped SONOS memory having an elevated source and drain will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4211350