Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-10-03
2009-11-03
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050100, C372S046015, C372S046010
Reexamination Certificate
active
07613220
ABSTRACT:
A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers in the vicinity of the cavity facets disordered by impurity diffusion. Relationships λ1>λb1, λ2>λb2, λ1>λ2, and E1≦E2are satisfied, where λ1and λ2are defined, respectively, as the emission wavelengths of the active layers of the first and second semiconductor lasers, E1and E2, respectively, as the forbidden band energies of the buffer layers of the first and second semiconductor lasers, and λb1and λb2respectively as the wavelengths corresponding to the forbidden band energies of the buffer layers of the first and second semiconductor lasers. The generation of reactive currents flowing through the window portions, which is caused by the intensification of disordering performed for window region formation, can be appropriately suppressed for both types of integrated semiconductor lasers.
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Kidoguchi Isao
Satoh Tomoya
Takayama Toru
Hamre Schumann Mueller & Larson P.C.
Harvey Minsun
Panasonic Corporation
Park Kinam
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