Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-11-02
2008-10-07
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
Reexamination Certificate
active
07433220
ABSTRACT:
A memory element having a configuration in which contents of recorded data can be judged easily and power consumption can be reduced, and a method of driving the same are provided. A memory element10of the present invention includes variable resistance elements11and12whose resistance state changes reversibly between a high resistance state and a low resistance state by applying a voltage of a different polarity between an electrode1of one side and an electrode2of the other side; the electrode1of one side in each element of the two variable resistance elements11and12is made a common electrode; and the electrode2of the other side in each element of the two variable resistance elements11and12is made independent and is provided respectively with the terminal X and terminal Y, to form a memory cell having two terminals in total.
REFERENCES:
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6977835 (2005-12-01), Kang
patent: 7129133 (2006-10-01), Avanzino et al.
patent: 2003/0234449 (2003-12-01), Aratani et al.
Phys. Rev. Lett. 21, (1968) p. 1450 by S.R. Ovshinsky is cited as an example of a phase change memory device.
Aratani Katsuhisa
Hara Masaaki
Shiimoto Tsunenori
Tsushima Tomohito
Nguyen Van-Thu
Sony Corporation
Wolf Greenfield & Sacks P.C.
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