Two transistor single capacitor ferroelectric memory

Details Two transistor single capacitor ferroelectric memory Two transistor single capacitor ferroelectric memory

1999-03-22

2000-08-08

Elms, Richard

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, G11C 1122

Patent

active

061011177

ABSTRACT:
A back-plane ferroelectric memory apparatus employing a read transistor, a write transistor and a ferroelectric capacitor storage means. A back plane forms a gate region underneath the read transistor with the potential of the back plane affected by polarization of the ferroelectric capacitor. The write and read transistors are different, the write transistor may be a vertical structure and the read transistor may be a write transistor and the write transistor's drain is connected to the back plane of read transistor and a plate of the ferroelectric capacitor.

REFERENCES:
patent: 5396452 (1995-03-01), Wahlstrom
patent: 5656528 (1997-08-01), Wahlstrom
patent: 5737261 (1998-04-01), Taira

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