Two transistor flash EPROM cell

Details Two transistor flash EPROM cell Two transistor flash EPROM cell

1996-09-27

1999-06-22

Nelms, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257316, H01L 29788

Patent

active

059145145

ABSTRACT:
A two-transistor flash EPROM cell for high-speed high-density PLD applications is provided. The two-transistor cell includes a storage transistor connected in series to an access transistor. The storage transistor prevents problems associated with both over-erase and punch-through, and allows for scaling of the gate length to realize 5V cell programming.

REFERENCES:
patent: 3986054 (1976-10-01), Hansen et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5218568 (1993-06-01), Lin et al.
patent: 5329487 (1994-07-01), Gupta et al.
patent: 5379253 (1995-01-01), Bergemont
patent: 5471422 (1995-11-01), Chang et al.
patent: 5687118 (1997-11-01), Chang

Affiliated with

Also associated with

Rating

Two transistor flash EPROM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two transistor flash EPROM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two transistor flash EPROM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1709561