Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-06
1999-08-03
Tsai, Jey
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257300, H01L 218242
Patent
active
059329041
ABSTRACT:
The method of forming the two transistor semi-conductor structure includes forming a device area for a MOS transistor and for a ferroelectric memory (FEM) gate unit on a silicon substrate. A conventional MOS transistor is formed on the substrate. A FEM cell includes a FEM gate unit formed on the substrate, either above or along side of the MOS transistor. The FEM gate unit is spaced apart from a source region and a drain region. Formation of the various conductive channels may take place at various stages of the manufacture, depending on what other devices are built on the substrate, and depending on the efficiencies of the various orders of construction. The structure of the two transistor semiconductor includes a silicon substrate, which may be a bulk silicon substrate or an SOI-type substrate. Conductive channels of three types are located above the substrate. A FEM gate unit is located above a gate region, either over or along side of a conventional MOS transistor, wherein the FEM gate unit includes a lower metal layer, an FE layer, and an upper metal layer.
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Hsu Sheng Teng
Lee Jong Jan
Maliszewski Gerald
Ripma David C.
Sharp Kabushiki Kaisha
Sharp Laboratories of America Inc.
Tsai Jey
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