Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-01-12
1997-04-29
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257298, 257320, 257321, 36518507, 36518508, 3651851, 36518526, H01L 29788, H01L 27108
Patent
active
056252110
ABSTRACT:
An electrically-alterable switch includes a floating gate EEPROM transistor having a source, a drain, a control gate, and a floating gate. A select transistor includes a source capacitively coupled to the floating gate of the EEPROM transistor via a tunneling oxide, a drain, and a gate. A pass transistor, having a source, a drain, and a gate comprising a portion of the floating gate may be included in the structure.
REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4300212 (1981-11-01), Simko
patent: 4375086 (1983-02-01), van Velthoven
patent: 4495427 (1985-01-01), Cartwright
patent: 4617479 (1986-10-01), Hartmann et al.
patent: 4622656 (1986-11-01), Kamiya et al.
patent: 4672580 (1987-06-01), Yau et al.
patent: 4742492 (1988-05-01), Smayling et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4851361 (1989-07-01), Schumann et al.
patent: 4858185 (1989-08-01), Kowshik et al.
patent: 4878199 (1989-10-01), Toshiba
patent: 5015885 (1991-05-01), El Gamal et al.
patent: 5136540 (1992-08-01), Hayashi et al.
patent: 5247478 (1993-09-01), Guota et al.
Actel Corporation
Ngo Ngan V.
LandOfFree
Two-transistor electrically-alterable switch employing hot elect does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Two-transistor electrically-alterable switch employing hot elect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-transistor electrically-alterable switch employing hot elect will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-708284