Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-24
1999-11-30
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
349 52, H01L 2978
Patent
active
059947489
ABSTRACT:
A MIM nonlinear device is provided having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic. A liquid-crystal display panel may be manufactured using the device to exhibit high image-quality. A method for manufacturing such a MIM nonlinear device is also provided. A MIM nonlinear device may include a first conductive film, an insulating film and a second conductive film laminated on a substrate. The insulating film may contain water at a content gradient descending in the direction of the film thickness from the surface facing the second conductive film. The hydrogen spectrum that is derived from the water and obtained by a secondary ion-mass spectrography (SIMS) elemental analysis with the radiation of cesium primary ions exhibits a peak near a surface of the insulating film facing the second conductive film. Additionally, the thermal desorption spectroscopy of the insulating film has a peak derived from water in the insulating film within a range of 220.degree. C..+-.5.degree. C.
Asakawa Tsutomu
Inoue Takashi
Ito Wataru
Seki Takumi
Takano Yasushi
Hardy David B.
Seiko Epson Corporation
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