Two terminal memory array having reference cells

Details Two terminal memory array having reference cells Two terminal memory array having reference cells

2007-06-05

2007-06-05

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000

Reexamination Certificate

active

11478520

ABSTRACT:
A memory including reference cells is provided. The memory has address decoding circuitry and an array of memory cells that are non-volatile and re-writable. Each memory cell has a two terminal memory plug that is capable of experiencing a change in resistance. Sensing circuitry compares activated memory cells to a reference level. The reference level is typically generated by at least one reference cell that can be selected at the same time the memory cell is selected.

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