Two-terminal electrically-reprogrammable programmable logic elem

Details Two-terminal electrically-reprogrammable programmable logic elem Two-terminal electrically-reprogrammable programmable logic elem

1998-06-24

1999-06-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257300, 257315, 257316, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059145099

ABSTRACT:
A non-volatile two terminal programmable logic element and associated methods for charging and discharging are disclosed. The logic element includes one input and one output terminal, a first capacitor region, a second capacitor region, and a floating gate (transistor-type) structure. The first capacitor region does not permit tunneling. The second capacitor region permits tunneling between its respective electrodes when a predetermined voltage, substantially higher than the normal operating voltage is applied. The source is connected to the input terminal and one electrode of the first capacitor region. The drain is connected to the output terminal and one electrode of the second capacitor region. The floating gate is connected to the other electrodes of the first and second capacitor regions. A programmable logic device constructed from these elements and associated methods of programming and erasing such a device are also shown.

REFERENCES:
patent: 5172196 (1992-12-01), Matsukawa et al.
patent: 5495116 (1996-02-01), Funakoshi et al.
patent: 5544103 (1996-08-01), Lambertson
patent: 5721440 (1998-02-01), Kowalski
Yosuke Mochizuki, "Non-Volatile, and High Density Rewritable FPGA Developed Logic Change Becomes Possible on Board: Cell of a Flash Memory is Used as a Switch," Nikkei Micro devices, July 1995, at 262 (translated).

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