Two step semiconductor manufacturing process for copper...

Details Two step semiconductor manufacturing process for copper... Two step semiconductor manufacturing process for copper...

2006-10-17

2006-10-17

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S687000, C205S109000, C205S149000

Reexamination Certificate

active

07122466

ABSTRACT:
An embodiment of the invention is a method of manufacturing copper interconnects30on a semiconductor wafer10where an electroplating process is used to deposit a first layer of copper grains30dhaving an initial grain size and a second layer of copper grains30ehaving a different initial grain size.

REFERENCES:
patent: 6451682 (2002-09-01), Fujikawa et al.
patent: 6709562 (2004-03-01), Andricacos et al.
patent: 6709970 (2004-03-01), Park et al.
patent: 6753251 (2004-06-01), Ritzdorf et al.
patent: 6861354 (2005-03-01), Uzoh et al.

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