Two step process for forming void-free oxide layer over stepped

Details Two step process for forming void-free oxide layer over stepped Two step process for forming void-free oxide layer over stepped

1990-02-02

1994-05-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437235, 4272551, 4272552, 4272553, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

053148452

ABSTRACT:
A two step process is disclosed for forming a silicon oxide layer over a stepped surface of a semiconductor wafer while inhibiting the formation of voids in the oxide layer which comprises depositing a layer of an oxide of silicon over a stepped surface of a semiconductor wafer in a CVD chamber by flowing into the chamber a gaseous mixture comprising a source of oxygen, a portion of which comprises O.sub.3, and tetraethylorthosilicate as the gaseous source of silicon while maintaining the pressure in the CVD chamber within a range of from about 250 Torr to about 760 Torr and then depositing a second layer of oxide over the first layer in a CVD chamber by flowing into the chamber a gaseous mixture comprising a source of oxygen, a portion of which comprises O.sub.3 ; and tetraethylorthosilicate as the gaseous source of silicon while maintaining the CVD chamber at a lower pressure than during the first deposition step.

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patent: 4872947 (1989-10-01), Wang et al.
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Ghandhi, S., VLSI Fabrication Principles, Wiley & Sons, 1983, p. 423.
Sze, S., VLSI Technology, pp. 95, 107-108, McGraw-Hill, 1983.
Sze, S, Semiconductor Devices, p. 341, Wiley & Sons, 1985.

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