Two step process for cleaning a substrate processing chamber

Details Two step process for cleaning a substrate processing chamber Two step process for cleaning a substrate processing chamber

1998-09-03

2000-05-30

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723R, 134 11, C23C 1600, C23F 102

Patent

active

060687290

ABSTRACT:
A method and apparatus for removing particles from an interior surface of a processing chamber using a two-step cleaning process. The method includes introducing a first cleaning process gas into the processing chamber, applying energy to that first cleaning process gas to remove particles from the processing chamber's interior surface, and introducing a second cleaning process gas into the processing chamber to remove a cleaning residue formed by a reaction between the first cleaning process gas and the processing chamber's interior surface. Removing or gettering the cleaning residue from the chamber wall improves the quality of the wafers formed in the process.

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