Two-step plasma process for selective anisotropic etching of pol

Details Two-step plasma process for selective anisotropic etching of pol Two-step plasma process for selective anisotropic etching of pol

1984-01-23

1985-03-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045029156

ABSTRACT:
The disclosure relates to a two-step for selective anisotropic etching of polycrystalline silicon having a silicon dioxide base thereunder and an exposed opposing face with contaminants thereon including silicon dioxide without leaving a residue wherein the silicon is initially etched with a non-selective etchant for a distance below all contaminants and then an etchant used is a highly anisotropic selective polycrystalline silicon etchant.

REFERENCES:
patent: 4211601 (1980-07-01), Mogab

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