Two-step photolithography method for aligning and patterning non

Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing

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430316, 430317, 430318, 430323, 438975, 148DIG102, G03F 900, G03F 736

Patent

active

057389616

ABSTRACT:
A method for forming a patterned non-transparent layer over a substrate. There is first provided a substrate which has an alignment mark formed thereupon. There is then formed over the substrate including the alignment mark a blanket non-transparent layer. The blanket non-transparent layer only partially replicates the alignment mark to yield upon the blanket non-transparent layer a partially replicated alignment mark at a location substantially corresponding with the location of the alignment mark formed upon the substrate. There is then removed through a first photolithographic and etch method a first portion of the blanket non-transparent layer to completely expose the alignment mark while simultaneously forming a partially patterned non-transparent layer. The first photolithographic and etch method employs the partially replicated alignment mark to register a first photolithographic mask with respect to the substrate. Finally, there is then formed through a second photolithographic and etch method a patterned non-transparent layer from the partially patterned non-transparent layer. The second photolithographic and etch method employs the alignment mark to register a second photolithographic mask with respect to the substrate. The method is particularly useful for forming patterned conductor metal layers with optimal overlay registration within integrated circuits.

REFERENCES:
patent: 4125418 (1978-11-01), Vinton
patent: 5128283 (1992-07-01), Tanaka
patent: 5270255 (1993-12-01), Wong
patent: 5456756 (1995-10-01), Ramaswami et al.

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