Two step method of cleaning silicon wafers

Details Two step method of cleaning silicon wafers Two step method of cleaning silicon wafers

1979-09-25

1981-04-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 4, 156638, 156657, 156662, 252 793, H01L 21306

Patent

active

042617910

ABSTRACT:
Silicon wafers are cleaned by first immersing them in a film forming solution which reacts with the dirty wafers to form a film on the wafers and then immersing the wafers in a film stripping solution which removes the film. For silicon wafers both the film forming solution and the film stripping solution may be formed from separate aqueous source solutions comprising 49% HF by weight and 70% HNO.sub.3 by weight, respectively. The film forming solution comprises 99.1% to 99.5% by volume the HF solution and 0.5% to 0.9% by volume the HNO.sub.3 solution. A small quantity of a wetting agent may be present in this solution. The stripping solution comprises 95% to 99% by volume of the HNO.sub.3 solution and 5% to 1% by volume of the HF solution. When utilized at room temperature the film forming solution forms a film on the wafers and the stripping solution removes the film with a minimum of attack on the silicon of the main wafer body. This silicon wafer cleaning method is successful with all silicon wafers independent of doping level.

REFERENCES:
patent: 2822250 (1958-02-01), Nobel
patent: 3102061 (1963-08-01), Thornhill
patent: 3224904 (1965-12-01), Klein
patent: 3813311 (1974-05-01), Beck et al.
patent: 4026741 (1977-05-01), Chang et al.

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