Two-step metal etch process for selective gap fill of submicron

Details Two-step metal etch process for selective gap fill of submicron Two-step metal etch process for selective gap fill of submicron

1996-02-26

1998-03-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438763, 438780, 438669, H01L 2144

Patent

active

057286280

ABSTRACT:
A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. Metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10, where the metal layer 14 has a first portion 15 and a second portion 17. Widely-spaced leads 16 are formed in the first portion 15 of the metal layer 14, and a first structural dielectric layer 26 is deposited on at least the widely-spaced leads. Closely-spaced leads 18 are formed in the second portion 17 of the metal layer 14, and low-permittivity material 34 is deposited between closely-spaced leads 18. A second structural dielectric layer 36 is deposited on at least low-permittivity material 34 and closely-spaced leads 18. An advantage of the invention includes improved structural strength by placing structurally weak low-permittivity material only where needed, in areas having closely-spaced leads.

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