Two-step formation of etch stop layer

Details Two-step formation of etch stop layer Two-step formation of etch stop layer

2006-08-15

2006-08-15

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S768000

Reexamination Certificate

active

07091133

ABSTRACT:
A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; (ii) depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; (iii) introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and (iv) depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma.

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