Two-step atomic layer deposition of copper layers

Details Two-step atomic layer deposition of copper layers Two-step atomic layer deposition of copper layers

2005-08-23

2005-08-23

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Metal coating

C427S255310

Reexamination Certificate

active

06933011

ABSTRACT:
A method of forming copper films at low temperatures is provided. The method comprises two steps of forming a copper oxide layer from a non-fluorine containing copper precursor on a substrate and reducing the copper oxide layer to form a copper layer on the substrate. The formation of copper oxide is carried out by atomic layer deposition using a non-fluorine containing copper precursor and an oxygen containing gas at a low temperature. Copper alkoxides, copper β-diketonates and copper dialkylamides are preferred copper precursors. The reduction of copper oxide layer formed is carried out using a hydrogen containing gas at a low temperature.

REFERENCES:
patent: 4997516 (1991-03-01), Adler
patent: 4997722 (1991-03-01), Adler
patent: 5753309 (1998-05-01), Fakler et al.
patent: 5925403 (1999-07-01), Yoshizawa et al.
patent: 6482740 (2002-11-01), Soininen et al.

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