Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-04-16
1984-11-27
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 156651, 156653, 156657, 1566591, 204197E, 252 791, 427 93, B44C 122, C03C 1500, C03C 2506
Patent
active
044849796
ABSTRACT:
Patterning of a relatively thick silicon nitride layer coating a relatively thin silicon dioxide layer which coats a major surface of a silicon wafer is accomplished by reactive ion etching, without penetrating through the silicon dioxide layer to the major surface of the silicon wafer, by means of a two-step reactive ion etching procedure using a patterned masking layer. During the first etching step the silicon nitride layer is not completely penetrated; during the second step the nitride layer but not the silicon dioxide layer is completely penetrated. The gas mixture for the first etching step differs from that of the second etching step in accordance with prescription that the ratio of the etch rate of silicon dioxide to that of silicon nitride during the second step is significantly smaller than such ratio during the first step. Preferred gas mixtures are oxygen and CHF.sub.3 in the ratio of about 0.6 to 1.0 for the first etching step and about 9 to 1 for the second etching step. Other systems of layers and wafers can be similarly patterned by means of two-step etching processes using selections of the gas mixtures in accordance with this prescription for the ratios of etch rates.
REFERENCES:
patent: 4174251 (1979-11-01), Paschke
patent: 4354897 (1982-10-01), Nakajima
IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, Method of Removing Nitride Overhang Ledge by Differential Etch Technique, by S. U. Kim, pp. 1369-1370.
J. Jankuj, "Plasma Etching of Silicon and Its Compounds in the Freon Plasma", Acta Phys. Slovaca, vol. 29, No. 2, 1979, pp. 155-159.
M. Y. Tsai et al., "One-Micron Polycide (WSi.sub.2 on Poly-Si) MOSFET Technology", Journal of Electrochemical Society: Solid-State Science and Technology, vol. 128, No. 10, Oct. 1981, pp. 2207-2214.
AT&T Bell Laboratories
Caplan David I.
Powell William A.
LandOfFree
Two-step anisotropic etching process for patterning a layer with does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Two-step anisotropic etching process for patterning a layer with, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-step anisotropic etching process for patterning a layer with will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2133094