Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1995-12-07
1997-04-08
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Data refresh
365236, G06F 1202
Patent
active
056194684
ABSTRACT:
A timing refresh circuit refreshes a timed circuit in a functionally equivalent manner, whether the timing refresh circuit is operated at a high frequency or a low frequency. The two-stage timing refresh circuit includes a counter and combinational logic, in combination, connected between a refresh timing signal generator and a control circuit. The counter is incremented for each refresh timing signal and decremented for each refresh cycle realized by the control circuit. The combinational logic converts the counter count to a refresh signal by generating a refresh request to the control circuit whenever a count is pending in the counter.
REFERENCES:
patent: 5473770 (1995-12-01), Vrba
patent: 5475645 (1995-12-01), Wada
patent: 5511176 (1996-04-01), Tsuha
Ghosh Atish
Pencis Jennifer B.
Advanced Micro Devices , Inc.
Yoo Do Hyun
LandOfFree
Two-stage memory refresh circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Two-stage memory refresh circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-stage memory refresh circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2401588