Two stage heteroepitaxial deposition process for GaP/Si

Details Two stage heteroepitaxial deposition process for GaP/Si Two stage heteroepitaxial deposition process for GaP/Si

1974-12-17

1976-06-15

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156610, 156612, 156613, 156614, 357 16, 357 17, 357 60, 357 88, H01L 21205, H01L 3300

Patent

active

039635384

ABSTRACT:
A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei, but thin enough to avoid cracks in the epitaxial layer due to stress induced by thermal expansion. The thickness is generally between 0.1-10.mu.. A second layer of GaP is then deposited using the standard halide transport process with thicknesses of 2-5 .mu. or higher. In the case of GaP LED's the thickness is about 10-40 .mu., whereas for the case of GaAsP LED's the GaP thickness is 2-5 .mu. and this is then followed, through the addition of AsH.sub.3, with GaAsP graded from the GaP composition to the particularly desired design composition. The final composition is then maintained for 10-20 .mu..

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broadie et al., "Selective Planar GaP/Si . . . Diodes" I.B.M. Tech. Discl. Bull. vol. 16, No. 4, Sept. 1973. p. 1301.
Berkenblit et al., "Reduction of Stress . . . Hetero-epitaxial Layers" IBID. vol. 12, No. 9, Feb. 1970, p. 1489.
Blum et al., "Vapor Growth of GaP onto Si Substrates" IBID., vol. 13, No. 5, Oct. 1970, p. 1245.
Ladany et al., "Two-Stage Epitaxial . . . GaAs . . . on Spinel", J. Applied Physics, vol. 43, No. 1, Jan. 1972, pp. 236-238.

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