Two stage etching process for through the substrate contacts

Details Two stage etching process for through the substrate contacts Two stage etching process for through the substrate contacts

1982-02-01

1983-04-26

Powell, William A.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

29580, 156644, 156651, 1566611, 357 55, 427 88, 430316, H01L 21312, B44C 122, C03C 1500, C03C 2506

Patent

active

043813410

ABSTRACT:
Electrical interconnection paths or vias are provided through relatively thick type III/V semiconductive substrates, such as gallium arsenide, to permit through the substrate electrical interconnection of planar transistor devices. The vias are etched in a two-step process which ensures that the via lateral dimensions are less than the transistor contacts with which they are aligned. The first step comprises selectively thinning the thick substrate from the back surface over an area which encompasses the transistor array formed in the front surface of the substrate. The second step is to etch the individual vias through this prior thinned substrate at areas aligned with the transistor contacts.

REFERENCES:
patent: 3493820 (1970-02-01), Rosvold
IEEE Transactions on Electron Devices, vol. ED-28, No. 2, Feb. 1981, Monolithic Microwave Amplifiers Formed by Ion Implantation into LEC, Gallium Arsenide Substrates by M. C. Driver et al., pp. 191-196.

Affiliated with

Also associated with

Rating

Two stage etching process for through the substrate contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two stage etching process for through the substrate contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two stage etching process for through the substrate contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1564795