Two stage etching of silicon nitride to form a nitride spacer

Details Two stage etching of silicon nitride to form a nitride spacer Two stage etching of silicon nitride to form a nitride spacer

2005-01-25

2005-01-25

Tokar, Michael (Department: 2829)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Fusing dopant with substrate

C438S585000

Reexamination Certificate

active

06846730

ABSTRACT:
A method of etching nitride over oxide is provided for the formation of vertical profile nitride spacers with high uniformity while maintaining the integrity of underlying thin oxide layers. The method includes providing a first gas flow including a first fluorocarbon and a second fluorocarbon at a first ratio, applying a first quantity of power to the first gas flow to create a first plasma, etching a first portion of a silicon nitride layer with the first plasma, providing a second gas flow including the first fluorocarbon and the second fluorocarbon at a second ratio greater than the first ratio, applying a second quantity of power to the second gas flow to create a second plasma, and etching a second portion of the silicon nitride layer with the second plasma.

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http://www.lamrc.com/inside/products/9400dfm,html., Silicon Etch DFM, TCP® 9400DFM Poly Etch System, Mar. 22, 2002, 1 page.

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