Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE29260
Reexamination Certificate
active
07902598
ABSTRACT:
An isolation transistor having a grounded gate is formed between a first access transistor construction and a second access transistor construction to provide isolation between the access transistor constructions of a memory device. In an embodiment, the access transistor constructions are recess access transistors. In an embodiment, the memory device is a DRAM. In another embodiment, the memory device is a 4.5F2 DRAM cell.
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Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Warren Matthew E
LandOfFree
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