Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-26
2009-02-03
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S199000, C438S459000, C257SE21415, C257SE27026
Reexamination Certificate
active
07485508
ABSTRACT:
Both sides of a semiconductor-on-insulator substrate are utilized to form MOSFET structures. After forming first type devices on a first semiconductor layer, a handle wafer is bonded to the top of a first middle-of-line dielectric layer. A lower portion of a carrier substrate is then removed to expose a second semiconductor layer and to form second type devices thereupon. Conductive vias may be formed through the buried insulator layer to electrically connect the first type devices and the second type devices. Use of block masks is minimized since each side of the buried insulator has only one type of devices. Two levels of devices are present in the structure and boundary areas between different types of devices are reduced or eliminated, thereby increasing packing density of devices. The same alignment marks may be used to align the wafer either front side up or back side up.
REFERENCES:
patent: 5324980 (1994-06-01), Kusunoki
patent: 6274982 (2001-08-01), Scott et al.
patent: 6525415 (2003-02-01), Koyanagi et al.
patent: 6573172 (2003-06-01), En et al.
patent: 7041576 (2006-05-01), Pozder et al.
patent: 7053400 (2006-05-01), Sun et al.
patent: 2005/0167782 (2005-08-01), Sanchez et al.
patent: 2005/0233493 (2005-10-01), Augusto
patent: 2007/0184597 (2007-08-01), Polishchuk et al.
Dyer Thomas W.
Yang Haining S.
International Business Machines - Corporation
Quach Tuan N.
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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