Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2006-11-17
2008-10-21
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S226000, C365S156000
Reexamination Certificate
active
07440313
ABSTRACT:
A two-port SRAM memory cell includes a pair of cross-coupled inverters coupled to storage nodes. An access transistor is coupled between each storage node and a write bit line and controlled by a write word line. The write word line is also coupled to a power supply terminal of the pair of cross-coupled inverters. During a write operation, the write word line is asserted. A voltage at the power supply terminal of the cross-coupled inverters follows the write word line voltage, thus making it easier for the stored logic state at the storage nodes to change, if necessary. At the end of the write operation, the write word line is de-asserted, allowing the cross-coupled inverters to function normally and hold the logic state of the storage node. Coupling the power supply node of the cross-coupled inverters allows faster write operations without harming cell stability.
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Abeln Glenn C.
Burnett James D.
Herr Lawrence N.
Higman Jack M.
Freescale Semiconductor Inc.
Hill Daniel D.
Hoang Huan
Singh Ranjeev K.
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