Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-12
2000-02-15
Mentel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257778, 257785, 257686, 257688, 257689, 29830, 29831, 361735, 361789, 361790, 365145, 365164, 365177, 365 65, 438108, 438109, H01L 2348
Patent
active
060256184
ABSTRACT:
A method of fabricating a complex IC in two parts and making the electrical connections between them afterwards is described. By this method, a ferroelectric RAM is fabricated in two parts, where the first part has an array of unit cells each of those has a transistor or a group of transistors serving the purpose of selecting one address for data recording and has an array of electrically conductive pads facing upward, protruding out from the surface of the first part, where the second part consists of a data-recording layer on another substrate. The data-recording layer consists of ferroelectric material and is pressed on the first part during data writing and reading.
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