Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2007-04-30
2010-02-09
Chace, Christian P (Department: 2187)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C711S154000, C711S206000, C711S221000
Reexamination Certificate
active
07660941
ABSTRACT:
A restrictive multi-level-cell (MLC) flash memory prohibits regressive page-writes. When a regressive page-write is requested, an empty block having a low wear-level count is found, and data from the regressive page-write and data from pages stored in the old block are written to the empty block in page order. The old block is erased and recycled. A two-level look-up table is stored in volatile random-access memory (RAM). A logical page address from a host is divided by a modulo divider to generate a quotient and a remainder. The quotient is a logical block address that indexes a first-level look-up table to find a mapping entry with a physical block address that selects a row in a second-level look-up table. The remainder locates a column in the row in the second-level look-up table. If any page-valid bits above the column pointed to by the remainder are set, the write is regressive.
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Chow David Q.
Lee Charles C.
Yu Frank I-Kang
Auvinen Stuart T.
Chace Christian P
gPatent LLC
Parikh Kalpit
Super Talent Electronics Inc.
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