Two-level lithographic mask for producing tapered depth

Details Two-level lithographic mask for producing tapered depth Two-level lithographic mask for producing tapered depth

1989-10-31

1990-07-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156651, 156653, 156655, 156657, 156662, 252 792, 252 793, 430313, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

049388410

ABSTRACT:
A method of producing a sloped surface in a semiconductor material. In the area where the slope is desired a dynamic mask is applied to the surface of the semiconductor. A standard mask is applied over the dynamic mask and patterned so that its edge laterally defines the bottom of the desired slope. The sample is then immersed in an etchant that etches the dynamic mask faster than the semiconductor material. The standard mask is not appreciably etched. The dynamic mask is progressively etched laterally, thereby dynamically exposing more of the semiconductor material to etchant and producing a sloped surface therein.

REFERENCES:
patent: 4092210 (1978-05-01), Hoepfner
patent: 4461672 (1984-07-01), Musser
patent: 4484978 (1984-11-01), Keyser
patent: 4595454 (1986-06-01), Dautremont-Smith
patent: 4635090 (1987-01-01), Tamaki et al.
patent: 4758305 (1988-07-01), Bonifield et al.

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