Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-10-14
1999-08-10
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430314, 430316, 438724, G03F 726
Patent
active
059357622
ABSTRACT:
A new method is disclosed for forming dual damascene patterns using a silylation process. A substrate is provided with a tri-layer of insulation formed thereon. A first layer of silylation photoresist is formed on the substrate and is imaged with a hole pattern by exposure through a mask. Using a silylation process, which greatly improves the depth of focus by reducing reflections from the underlying substrate, the regions in the first photoresist adjacent to the hole pattern are affixed to form top surface imaging mask. The hole pattern is then etched in the first photoresist. A second layer of photoresist is formed, and is imaged with a line pattern aligned with the previous hole pattern by exposure through a mask. The line pattern in the second photoresist is etched. The hole pattern in the first photoresist is transferred into the top layer of composite insulation first and then into the middle etch-stop layer by successive etching. The line pattern in the second photoresist layer is transferred into the first photoresist layer through a subsequent resist dry etching process. Finally, the line pattern and the hole pattern are transferred simultaneously into the top and lower layers of the composite insulation layer, respectively, through a final dry oxide etching. Having thus formed the integral hole and line patterns into the insulation layer, metal is deposited into the dual damascene pattern. Any excess metal on the surface of the insulating layer is then removed by any number of ways including chemical-mechanical polishing, thereby planarizing the surface and readying it for the next semiconductor process.
REFERENCES:
patent: 5094936 (1992-03-01), Misium et al.
patent: 5312717 (1994-05-01), Sachdev et al.
patent: 5384220 (1995-01-01), Sezi et al.
patent: 5427649 (1995-06-01), Kim et al.
patent: 5487967 (1996-01-01), Hutton et al.
patent: 5514247 (1996-05-01), Shan et al.
patent: 5529953 (1996-06-01), Shoda
patent: 5545512 (1996-08-01), Nakato
patent: 5550007 (1996-08-01), Taylor et al.
patent: 5602053 (1997-02-01), Zheng et al.
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5635333 (1997-06-01), Peterson et al.
patent: 5635337 (1997-06-01), Bartha et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5686354 (1997-11-01), Avanzino et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5756256 (1998-05-01), Nakato et al.
S. Waf et al. "Silicon Processing For The VLSI Era"--vol. 1, Lattice Press, Sunset Beach, CA, 1986, p. 443.
Dai Chang-Ming
Huang Jammy Chin-Ming
Ackerman Stephen B.
Duda Kathleen
Industrial Technology Research Institute
Saile George O.
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