Two layer LTO temperature oxide backside seal for a wafer

Stock material or miscellaneous articles – Composite – Of silicon containing

Reexamination Certificate

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C428S701000, C428S702000

Reexamination Certificate

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08007914

ABSTRACT:
A two layer LTO backside seal for a wafer. The two layer LTO backside seal includes a low stress LTO layer having a first major side and a second major side, the first major5 side of the low stress LTO layer adjacent to one major side of the wafer. The two layer LTO backside seal further includes a high stress LTO layer having a first major side and second major side, the first major side of the high stress LTO layer adjacent the second major side of the low stress LTO layer.

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patent: 0 798 765 (1997-10-01), None
patent: 0 822 588 (1998-02-01), None
patent: 0 825 639 (1998-02-01), None

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