Two layer dye photoresist process for sub-half micrometer resolu

Details Two layer dye photoresist process for sub-half micrometer resolu Two layer dye photoresist process for sub-half micrometer resolu

1988-02-22

1990-03-06

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430156, 430315, 430330, 430394, G03C 516

Patent

active

049065521

ABSTRACT:
Well-defined metal lines of 0.5 micrometers and less in width are produced on a substrate by photolithography, using a two layer photoresist process. The first resist layer, adjacent the substrate, is poly(methylmethacrylate) from about 0.5 to about 1 micrometer thick, having a sufficient amount of an ultraviolet absorbing dye to prevent positive interference of light reflected from the surface of the substrate during exposure. The second resist layer is a polymer of naphthoquinone diazide, in a thickness of about 0.5 to about 1.1 micrometers. To achieve 0.5 micrometer resolution of the metal line, the total thickness of the two resist layers is about 1.5 micrometers; to achieve less than 0.5 micrometer resolution, the total thickness of the two resist layers is about 1.0 micrometer.

REFERENCES:
patent: 4362809 (1982-12-01), Chen et al.
patent: 4668606 (1987-05-01), DoMinh et al.
Lin et al., "Practicing the Novolac Deep-UV Portable Conformable Masking Technique", J. Vac. Sci. Tech. No. 19(4), Nov./Dec. 1981, pp. 1313-1319.

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