Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-21
2006-03-21
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S947000, C438S962000
Reexamination Certificate
active
07015139
ABSTRACT:
A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of the size of the metalloprotein complex. The diameter of the metal atom aggregates used in the quantum device is 7 nm or smaller, and the pitch of the metalloprotein complex is preferably from 11 to 14 nm.
REFERENCES:
patent: 4728591 (1988-03-01), Clark et al.
patent: 4802951 (1989-02-01), Clark et al.
patent: 4812800 (1989-03-01), Fuchs et al.
patent: 5281543 (1994-01-01), Fukuzawa et al.
patent: 5412499 (1995-05-01), Chiu et al.
patent: 5622634 (1997-04-01), Noma et al.
patent: 5710436 (1998-01-01), Tanamoto et al.
patent: 5844834 (1998-12-01), Risch et al.
patent: 6159620 (2000-12-01), Heath et al.
patent: 6184610 (2001-02-01), Shibata et al.
patent: 2002/0192968 (2002-12-01), Yamashita
patent: 0 652 600 (1995-05-01), None
patent: 0 788 149 (1997-08-01), None
patent: 6-120481 (1994-04-01), None
patent: 7-202164 (1995-08-01), None
patent: 07-211913 (1995-08-01), None
patent: 7-263659 (1995-10-01), None
patent: 9-135017 (1997-05-01), None
Y. Nakamura et al.,Jpn. J. Appl. Phys.,35, L1465-L1467 (1996).
K. Yano et al.,Jpn. J. Appl. Phys.,63(12), 1248-1250 (1994).
Maximov et al. “Fabrication of quantum dot structures using aerosol deposition and plasma etching techniques” Journal of Vacuum Science and Technology A, vol. 11, Jul./Aug. 1993, pp. 748-753.
Tans et al., “Individual single-wall carbon nanotubes as quantum wires,” NATURE, vol. 386, Apr. 3, 1997, pp. 474-477.
R. Andres et al., “Self-Assembly of a Two-Dimensional Superlattice of Molecularly Linked Metal Clusters,”Science, 273, 1690-1693 (1996).
Nakamura, S. et al.: “High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures” Japanese Journal of Applied Physics, Part 2 (Letters), vol. 34, No. 7A, Jul. 1, 1995, pp. L797-L799.
Ozin, G. A.: “Nanochemistry: synthesis in diminishing dimensions” Advanced Materials, vol. 4, No. 10, Oct. 1992, pp. 612-649.
Kielin Erik
Wenderoth , Lind & Ponack, L.L.P.
LandOfFree
Two-dimensionally arrayed quantum device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Two-dimensionally arrayed quantum device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-dimensionally arrayed quantum device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3613223