Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27132, C257SE27133
Reexamination Certificate
active
07923763
ABSTRACT:
A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality of electrodes separating the plurality of pinned photodiodes, the plurality of electrodes are configured for two dimensional charge transport between two adjacent pinned photodiodes, and a plurality of readout nodes connected to the plurality of pinned photodiodes via address lines.
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Budd Paul A
Jackson, Jr. Jerome
Snell & Wilmer L.L.P.
Teledyne Licensing LLC
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