Two bit/four bit SONOS flash memory cell

Details Two bit/four bit SONOS flash memory cell Two bit/four bit SONOS flash memory cell

2005-05-02

2009-12-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309, C257SE21423, C438S287000, C438S954000, C365S184000

Reexamination Certificate

active

07629640

ABSTRACT:
Charge migration in a SONOS memory cell is eliminated by physically separating nitride layer storage sites with dielectric material. Increased storage in a cell is realized with a double gate structure for controlling bit storage in line channels between a source and a drain, such as with a FinFET structure in which the gates are folded over the channels on sides of a fin.

REFERENCES:
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6413802 (2002-07-01), Hu et al.
patent: 6720613 (2004-04-01), Chang
patent: 7091551 (2006-08-01), Anderson et al.
patent: 2003/0011020 (2003-01-01), Eitan
patent: 2004/0021172 (2004-02-01), Zheng et al.
patent: 2004/0119108 (2004-06-01), Chang
patent: 2004/0135195 (2004-07-01), Ahn et al.
patent: 2004/0235300 (2004-11-01), Mathew et al.
patent: 2004/0251487 (2004-12-01), Wu et al.
patent: 2005/0104117 (2005-05-01), Mikolajick et al.
patent: 2005/0199913 (2005-09-01), Hofmann et al.
patent: WO2004023556 (2004-03-01), None
Eitan et al, “NROM: A Novel Localized Trapping , 2-Bit Nonvolatile Memory Cell”, IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.
Huang et al., “Sub-50 nm P-Channel FinFET”, IEEE Transaction on Electron Devices, vol. 48, No. 5, May 2001, pp. 880-886.

Affiliated with

Also associated with

Rating

Two bit/four bit SONOS flash memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two bit/four bit SONOS flash memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two bit/four bit SONOS flash memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4094487