Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-07
2011-06-07
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S239000, C257S261000, C257S315000
Reexamination Certificate
active
07956403
ABSTRACT:
A flash memory includes a substrate with a protrusion, a control gate, two floating gates, and a dielectric layer. The protrusion extends from a top face of the substrate. The control gate is formed on the protrusion of the substrate and extendedly covers opposite sidewalls of the protrusion. The floating gates are respectively formed on top of the protrusion and being on two opposite sides of the control gate. The dielectric layer is sandwiched the control gate and each of the two floating gates. Because of the arcuate control gate used in the flash memory, the controllability of the control gate is increased and the memory cell window is enhanced.
REFERENCES:
patent: 2006/0202285 (2006-09-01), Kamiya et al.
patent: 2007/0158732 (2007-07-01), Kim
patent: 2007/0215954 (2007-09-01), Mouli
patent: 2007/0290223 (2007-12-01), Yagishita
“Office Action of Taiwan Counterpart Application”, issued on Jan. 25, 2011, p. 1-p. 5, in which the listed reference was cited.
Chang Ming-Cheng
Chang Yi-Feng
Liao Wei-Ming
Wang Jer-Chyi
Garcia Joannie A
Jianq Chyun IP Office
Nanya Technology Corporation
Richards N Drew
LandOfFree
Two-bit flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Two-bit flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-bit flash memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2674313