Two-bit cell semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S314000, C257S316000, C257S909000, C257SE29302, C257SE29309

Reexamination Certificate

active

10931901

ABSTRACT:
A 2-bit cell is made up of first and second diffusion regions provided on a substrate surface, first and second storage nodes adjacent to the first and second diffusion region, first and second gate electrodes provided on first and second storage nodes, a third storage node provided on the substrate and a third gate electrode provided on the third storage node. The first and second gate electrodes are connected common to form word line electrodes. A control gate electrode at right angles to the word line electrodes and a third diffusion region in the substrate surface disposed at a longitudinal end of the control gate electrode are provided. A storage node, Node 1, of interest, with the control gate channel as a drain, is read without the intermediary of the second node, which is not of interest, such that reading of Node 1 unaffected by the second node.

REFERENCES:
patent: 5583810 (1996-12-01), Van Houdt et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6256231 (2001-07-01), Lavi et al.
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6399441 (2002-06-01), Ogura et al.
patent: 6566705 (2003-05-01), Church
patent: 6721205 (2004-04-01), Kobayashi et al.
patent: 2003/0079540 (2003-05-01), Ogura
patent: 2001-156189 (2001-06-01), None
patent: 2001-230332 (2001-08-01), None
patent: 2001-512290 (2001-08-01), None
patent: 2001-357681 (2001-12-01), None
patent: 2002-26149 (2002-01-01), None

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