Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-17
2007-07-17
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C257SE21061, C257SE27063
Reexamination Certificate
active
10727550
ABSTRACT:
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, and a first doped region formed in the second well, wherein the first well, the second well, and the first doped region collectively form a parasitic bipolar junction transistor (BJT), and wherein the first well is the collector of the BJT, the second well is the base of the BJT, and the first doped region is the emitter of the BJT.
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C. Duvvury and A. Amerasekera, “ESD: A pervasive reliability concern for IC technologies,”Proc. of IEEE, vol. 81, pp. 690-702, May 1993.
T.-Y Chen and M.-D. Ker, “Investigation of the gate driven effect and substrate-triggered effect on ESD robustness of CMOS devices,”IEEE Trans. on Device and Materials Reliability, vol. 1, pp. 190-203, Dec. 2001.
Chuang Che-Hao
Ker Ming-Dou
Berkeley Law and Technology Group LLP
Huynh Andy
Nguyen Dao H.
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