Tunneling technology for reducing intra-conductive layer capacit

Details Tunneling technology for reducing intra-conductive layer capacit Tunneling technology for reducing intra-conductive layer capacit

1995-02-21

1997-09-23

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257776, H01L 2348, H01L 2352, H01L 2940

Patent

active

056708289

ABSTRACT:
The control speed of semiconductor circuitry is increased by forming air tunnels in the interwiring spaces of a conductive pattern to reduce intra-conductive layer capacitance.

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