Tunneling magnetoresistive element which includes Mg-O...

Details Tunneling magnetoresistive element which includes Mg-O... Tunneling magnetoresistive element which includes Mg-O...

2011-06-28

2011-06-28

Blouin, Mark (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07969690

ABSTRACT:
In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.

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