Tunneling magnetoresistance device with high...

Details Tunneling magnetoresistance device with high... Tunneling magnetoresistance device with high...

2008-03-11

2008-03-11

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11189867

ABSTRACT:
A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

REFERENCES:
patent: 6219274 (2001-04-01), Shimazawa et al.
patent: 6657830 (2003-12-01), Ito et al.
patent: 2006/0125034 (2006-06-01), Ohba et al.
patent: 09-198622 (1997-07-01), None
patent: 2002-025017 (2002-01-01), None

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