Tunneling magnetic sensor including platinum layer and...

Details Tunneling magnetic sensor including platinum layer and... Tunneling magnetic sensor including platinum layer and...

2011-03-29

2011-03-29

Cao, Allen T (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07916436

ABSTRACT:
A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.

REFERENCES:
patent: 2002/0097539 (2002-07-01), Hasegawa et al.
patent: 2005/0219770 (2005-10-01), Gill
patent: 2008/0074805 (2008-03-01), Ikarashi et al.
patent: 2008/0123223 (2008-05-01), Ide et al.
patent: 2008/0253038 (2008-10-01), Nakabayashi et al.
patent: 2000-091666 (2000-03-01), None
patent: 2000-322714 (2000-11-01), None

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